Part Number Hot Search : 
T3150 20CTH03 TS19370 BCM54 BT2222 82XS26D6 SMBJ5 279004
Product Description
Full Text Search
 

To Download SGC-6386Z Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Preliminary Information Product Description
Sirenza Microdevices' SGC-6386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6386Z does not require a drop resistor as compared to typical Darlington amplifiers. The SGC-6386Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency VD = 5V, ID = 80mA (Typ.)
Gain IRL ORL
SGC-6386Z
Pb
RoHS Compliant & Green Package
50-4000 MHz Silicon Germanium Cascadable Gain Block
20
0
10
-20
Return Loss (dB)
15
-10
Gain (dB)
Product Features * Single Fixed 5V Supply * Supply Drop Resistor not required * Patented Self Bias Circuitry * P1dB = 18.3 dBm at 1950 MHz * IP3 = 34.3 dBm at 1950 MHz * Robust 1000V ESD, Class 1C HBM Applications * PA Driver Amplifier * Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite
5
* No external components and wide band bias tee ZS = ZL = 50 ohms, Tlead=25C
-30
0 0 1 2 3 4
-40
Frequency (GHz)
Typical performance with appropriate application circuit
Symbol G P1dB OIP3 IRL ORL NF VD ID Rth, j-l
Parameters Small Signal Gain Output Power at 1dB Compression Output Third Order Intercept Point Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
VD = 5.0V ID = 80mA Typ. ZS = ZL = 50 Ohms
Units dB dBm dBm dB dB dB V mA C/W
Frequency 850 MHz 1950 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950 MHz 1950 MHz 1930 MHz
Min.
Typ. 16.3 11.9 19.3 18.3 35.6 34.3 18.0 17.0 4.2 5.0 80 106
Max.
Test Conditions:
OIP3 Tone Spacing = 1MHz Pout per tone = 0 dBm
TL = 25C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-104746 Rev A
Preliminary Information SGC-6386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies (Application Circuit)
Frequency (MHz) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
VD = 5V TL = 25C ID = 80mA Typ. ZS = ZL = 50 Ohms
Unit dB dBm dBm dB dB dB dB
100 - 1000MHz App. Circuit 100 17.5 35.8 19.4 10.0 12.0 21.0 3.1 500 17.3 36.2 19.7 35.0 20.0 21.0 3.3 850 16.2 35.6 19.3 21.0 22.0 21.0 3.4
1000 - 2200MHz App. Circuit 1000 15.1 34.9 18.9 12.0 15.0 21.0 3.5 1950 11.9 34.3 18.3 18.0 17.0 19.0 4.2 2200 11.1 33.6 18.0 16.0 15.0 18.0 4.3
Test Conditions:
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
NF vs. Frequency (VD = 5V, ID = 80mA Typ.)
7 * No external components and wide band bias tee ZS = ZL = 50 ohms, Tlead=25C
Absolute Maximum Ratings
Parameter Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms Absolute Limit 120 mA 6.5 V +18 dBm +150C -40C to +85C +150C
6
NF(dB)
5
4
3
2 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Id vs. Vd Vs. Temperature
100
Reliability & Qualification Information
80
Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level
Rating Class 1C MSL 1
Id (mA)
60
This product qualification report can be downloaded at www.sirenza.com
40
T=-40C T=25C
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
20
T=85C
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Vd (V)
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com
EDS-104746 Rev A
Preliminary Information SGC-6386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance, 100-1000 MHz Application Circuit ( Bias: VD= 5.0 V, ID= 80 mA (Typ.) )
lS21l vs Frequency
19
0 -5
lS11l vs Frequency
18
-10
lS21l (dB)
17
lS11l (dB)
T=-40C
-15 -20 -25 -30 -35 -40 100 T=-40C T=25C T=85C 200 300 400 500 600 700 800 900 1000
16
15
T=25C T=85C
14 100
200
300
400
500
600
700
800
900
1000
Frequency (MHz)
Frequency (MHz)
lS12l vs Frequency
-10 0 -5 -15 -10
lS22l vs Frequency
lS22l (dB)
-15 -20 -25 -30 -35 -40 100 T=-40C T=25C T=85C 200 300 400 500 600 700 800 900 1000
-20
-25
T=-40C T=25C T=85C
-30 100
200
300
400
500
600
700
800
900
1000
Frequency (MHz)
Frequency (MHz)
P1dB vs Frequency
22
38
OIP3 vs Frequency
21
37
P1dB (dBm)
20
19 T=-40C 18 T=25C T=85C 17 100 200 300 400 500 600 700 800 900 1000
OIP3 (dBm)
36
35 T=-40C 34 T=25C T=85C 33 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
Frequency (MHz)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-104746 Rev A
Preliminary Information SGC-6386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance, 1000-2200 MHz Application Circuit ( Bias: VD= 5.0 V, ID= 80 mA (Typ.) )
lS21l vs Frequency
17 16 15
lS11l vs Frequency
0 -5 -10 -15 -20 -25 -30 T=-40C T=25C T=85C
lS21l (dB)
14 13 12 11 10 9 1.0 1.2 1.4 1.6 1.8 2.0 2.2 T=-40C T=25C T=85C
lS11l (dB)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Frequency (GHz)
Frequency (GHz)
lS22l vs Frequency
0 -5
lS12l vs Frequency
-10
-15
lS12l (dB)
-20 T=-40C -25 T=25C T=85C -30 1.0 1.2 1.4 1.6 1.8 2.0 2.2
lS22l (dB)
-10 -15 -20 T=-40C -25 -30 1.0 1.2 1.4 1.6 1.8 2.0 2.2 T=25C T=85C
Frequency (GHz)
Frequency (GHz)
P1dB vs Frequency
21
37 36
OIP3 vs Frequency
20
35
P1dB (dBm)
19
OIP3 (dBm)
34 33 32 31 30 T=-40C T=25C T=85C 1.0 1.2 1.4 1.6 1.8 2.0 2.2
18 T=-40C 17 T=25C T=85C 16 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Frequency (GHz)
303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4
Frequency (GHz)
http://www.sirenza.com
EDS-104746 Rev A
Preliminary Information SGC-6386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Basic Application Circuit
Vs
Application Circuit Element Values
Reference Designator 100-1000MHz 1000-2200MHz
1uF
1000pF
C3
C1 1000pF 100pF 100pF 100nH 6.8pF 6.8pF 6.8pF 39nH
L1 4 RF IN C1 1
SGC-6386Z
C2 C3 L1
3 C2
RF OUT
2
Mounting Instructions
1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
1uF 1000pF C3 L1 C1 C2
Part Identification Marking & Pinout
3
4
2
Pin #
Function
Description
1
1
RF IN
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance
2,4
GND
Part Number SGC-6386Z
Package / Lead Composition Lead Free, RoHS Compliant
Reel Size 13"
Devices / Reel 3000
3
RF output and bias pin. This pin requires the use of an RF OUT / external DC blocking capacitor chosen for the frequency of DCBIAS operation.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-104746 Rev A
Preliminary Information SGC-6386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
86 PCB Pad Layout
Dimensions in inches [millimeters] Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants.
RF IN
RF OUT
86 Nominal Package Dimensions
Dimensions in inches [millimeters] A link to the 86 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-104746 Rev A


▲Up To Search▲   

 
Price & Availability of SGC-6386Z

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X